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Verios 5 XHR SEM – Scanning electron microscope

Scanning electron microscopy characterization of nanomaterials with sub-nanometer resolution and high material contrast.

Verios 5 XHR Scanning Electron Microscope

The Verios 5 XHR SEM offers subnanometer resolution over the full 1 keV to 30 keV energy range with excellent materials contrast. Unprecedented levels of automation and ease-of-use make this performance accessible to users of any experience level.

Scanning electron microscopy characterization

  • High resolution nanomaterial imaging with the UC+ monochromated electron source for sub-nanometer performance from 1-30 kV.
  • High contrast on sensitive materials with excellent performance down to 20 eV landing energy and high-sensitivity in-column and below-the-lens detectors and signal filtering for low-dose operation and optimal contrast selection.
  • Greatly reduced time to nanoscale information for users with any experience level using the Elstar electron column featuring SmartAlign and FLASH technologies.
  • Consistent measurement results with ConstantPower lenses, electrostatic scanning and a choice of two piezoelectric stages.
  • Flexibility for accessories with a large chamber.
  • Unattended SEM operation with Thermo Scientific AutoScript 4 Software, an optional Python-based application programming interface.
Electron beam resolution
  • 0.6 nm at 30 kV STEM (optional)
  • 0.6 nm at 2-15 kV
  • 0.7 nm at 1 kV
  • 1.0 nm at 500 V
Standard detectors ETD, TLD, MD, ICD, beam current measurement, Nav-Cam+, IR-camera
Optional detectors Optional detectors | EDS, EBSD, RGB cathodoluminescence, Raman, WDS, and more
Stage bias (beam deceleration, optional) Up to -4000 V, included as standard
Sample cleaning Integrated plasma cleaner, included as standard
Sample manipulation Verios 5 UC

  • 5-axis motorized eucentric stage, with XYR axes piezo driven.
  • XY range 150 x 150 mm2, 70° tilt range.
  • Loading through the door.
Verios 5 HP

  • Chamber mounted, ultra-stable 5 axis all piezo motorized stage.
  • XY range 100 x 100 mm2, 70° tilt range.
  • Loading via automated load lock.

 

Chamber 379 mm inside width, 21 ports
Software options
  • Thermo Scientific Maps Software for automatic large area acquisition using tiling and stitching; correlative work
  • Thermo Scientific AutoScript 4 Software; a Python-based application programming interface
  • Pattern generation software
  • TopoMaps for image colorization, image analysis and 3D surface reconstruction

SmartAlign technology

SmartAlign technology eliminates the need for any user alignments of the electron column, which not only minimizes maintenance, but also increases your productivity.

Innovative electron optics

Including Thermo Scientific’s patented UC+ gun (monochromator), ConstantPower lenses and electrostatic scanning for accurate and stable imaging.

Sub-nanometer resolution

Elstar Schottky monochromated (UC+) FESEM technology and performance with sub-nanometer resolution from 1 to 30 keV.

Consistent measurement results

The Verios is ideally suited to lab-based metrology applications, with the ability to calibrate to a NIST certified standard at high magnification.

Low dose operation and optimal contrast selection

Advanced suite of high-sensitivity, in-column & below-the-lens detectors and signal filtering for low dose operation and optimal contrast selection.

Easy access to beam landing energies

As low as 20 eV with very high resolution for true surface characterization.

Unattended SEM operation

With AutoScript 4 Software, an optional Python-based application programming interface (API).

Large chamber

With a choice of two precise and stable piezo-driven stages.

Fundamental Materials Research

Novel materials are investigated at increasingly smaller scales for maximum control of their physical and chemical properties. Electron microscopy provides researchers with key insight into a wide variety of material characteristics at the micro- to nano-scale.

Semiconductor research and development

Innovation starts with research and development. Learn more about solutions to help you understand innovative structures and materials at the atomic level.

Semiconductor metrology

Manufacturing today’s complex semiconductors requires exact process controls. Learn more about advanced metrology and analysis solutions to accelerate yield learnings.

Semiconductor Failure Analysis

Complex semiconductor device structures result in more places for defects to hide. Learn more about failure analysis solutions to isolate, analyze, and repair defects.

Semiconductor materials characterization

Many factors impact yield, performance, and reliability. Learn more about solutions to characterize physical, structural, and chemical properties.

Energy Dispersive Spectroscopy

Energy dispersive spectroscopy (EDS) collects detailed elemental information along with electron microscopy images, providing critical compositional context for EM observations. With EDS, chemical composition can be determined from quick, holistic surface scans down to individual atoms.

Imaging Hot Samples

Studying materials in real-world conditions often involves working at high temperatures. The behavior of materials as they recrystallize, melt, deform, or react in the presence of heat can be studied in situ with scanning electron microscopy or DualBeam tools.

Multi-scale analysis

Novel materials must be analyzed at ever higher resolution while retaining the larger context of the sample. Multi-scale analysis allows for the correlation of various imaging tools and modalities such as X-ray microCT, DualBeam, Laser PFIB, SEM and TEM.

Cathodoluminescence

Cathodoluminescence (CL) describes the emission of light from a material when it is excited by an electron beam. This signal, captured by a specialized CL detector, carries information on the sample’s composition, crystal defects, or photonic properties.

SEM Metrology

Scanning electron microscopy provides accurate and reliable metrology data at nanometer scales. Automated ultra-high-resolution SEM metrology enables faster time-to-yield and time-to-market for memory, logic, and data storage applications.